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FDME910PZT - P-Channel MOSFET

Description

switching in cellular handset and other ultraportable applications.

Features

  • a MOSFET with low on.
  • state resistance and zener diode protection against ESD. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel POWERTRENCH) -20 V, -8 A, 24 mW FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode protection against ESD. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Features • Max RDS(on) = 24 mW at VGS = −4.5 V, ID = −8 A • Max RDS(on) = 31 mW at VGS = −2.5 V, ID = −7 A • Max RDS(on) = 45 mW at VGS = −1.8 V, ID = −6 A • Low Profile: 0.55 mm Maximum in the New Package MicroFET 1.6x1.
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